CSD88537ND
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 SO-8 封装的双路、15mΩ、60V、N 沟道 NexFET™ 功率 MOSFET
物料参数
| VDS (V): | 60 |
| VGS (V): | 20 |
| Type: | N-channel |
| Configuration: | Dual |
| Rds(on) at VGS=10 V (max) (mΩ): | 15 |
| VGSTH typ (typ) (V): | 3 |
| QG (typ) (nC): | 14 |
| QGD (typ) (nC): | 2.3 |
| QGS (typ) (nC): | 4.6 |
| ID - silicon limited at TC=25°C (A): | 16 |
| ID - package limited (A): | 15 |
| Logic level: | No |
| Rating: | Catalog |
| Operating temperature range (°C): | -55 to 150 |
| VDS (V): | 60 |
| VGS (V): | 20 |
| Type: | N-channel |
| Configuration: | Dual |
| Rds(on) at VGS=10 V (max) (mΩ): | 15 |
| VGSTH typ (typ) (V): | 3 |
| QG (typ) (nC): | 14 |
| QGD (typ) (nC): | 2.3 |
| QGS (typ) (nC): | 4.6 |
| ID - silicon limited at TC=25°C (A): | 16 |
| ID - package limited (A): | 15 |
| Logic level: | No |
| Rating: | Catalog |
| Operating temperature range (°C): | -55 to 150 |
DigiKey
库存数量:24588
| 1: | ¥19.6059 |
| 10: | ¥12.5429 |
| 50: | ¥9.5024 |
| 100: | ¥8.5190 |
| 500: | ¥6.7954 |
DigiKey
库存数量:24588
| 1: | ¥19.6039 |
| 10: | ¥12.5417 |
| 50: | ¥9.5015 |
| 100: | ¥8.5182 |
| 500: | ¥6.7948 |
DigiKey
库存数量:24588
| 2500: | ¥5.6425 |
| 7500: | ¥5.0832 |
